bc368 npn general purpose amplifier this device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 a. sourced from process 37. absolute maximum ratings* ta = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations thermal characteristics ta = 25c unless otherwise noted symbol characteristic max units bc368 p d total device dissipation derate above 25 c 625 5.0 mw mw / c r jc thermal resistance, junction to case 83.3 c/w r ja thermal resistance, junction to ambient 200 c/w bc368 symbol parameter value units v ceo collector-emitter voltage 20 v v ces collector-base voltage 25 v v ebo emitter-base voltage 5.0 v i c collector current - continuous 2.0 a t j , t stg operating and storage junction temperature range -55 to +150 c b c e to-92 ? 1997 fairchild semiconductor corporation
3 electrical characteristics ta = 25 c unless otherwise noted off characteristics symbol parameter test conditions min max units on characteristics h fe dc current gain i c = 5.0 ma, v ce = 10 v i c = 0.5 a, v ce = 1.0 v i c = 1.0 a, v ce = 1.0 v 50 85 60 375 v ce( sat ) collector-emitter saturation voltage i c = 1.0 a, i b = 100 ma 0.5 v v be( on ) base-emitter on voltage i c = 1.0 a, v ce = 1.0 v 1.0 v small signal characteristics f t current gain - bandwidth product i c = 10 ma, v ce = 5.0 v, f = 35 mhz 45 mhz v (br)ceo collector-emitter breakdown voltage i c = 10 ma, i b = 020v v (br)ces collector-base breakdown voltage i c = 100 c 10 1.0 typical characteristics typical puls ed current gain vs collector current 0.001 0.01 0.1 1 0 100 200 300 400 500 i - co l l ec to r cu rr ent (a) h - typ ical pulsed curre nt gain fe - 40 c 25 c c v = 5v ce 125 c colle ctor- emitter saturation voltage vs collector current 0. 0 1 0 . 1 1 0. 0 1 0.1 1 i - collector current (a) v - collector-emitter voltage (v) cesat c = 1 0 125 c - 4 0 c 25 c bc368 npn general purpose amplifier (continued)
bc368 pow e r di ss ip at io n v s ambient temperature 0 25 50 75 100 125 150 0 100 200 300 400 500 600 700 temper at ure ( c) p - pow er dissipation (mw) d o to-92 npn general purpose amplifier (continued) typical characteristics (continued) collector-base capacitance vs collector-base voltage 0 4 8 1216202428 0 10 20 30 40 v - collector-base voltage (v) - collector-base capacitance (pf) cb obo gain bandwidth product vs collector current 1 10 100 1000 0 100 200 300 400 500 i - collector current (ma) h - gain bandwidth product (mhz) c fe v = 10v ce collector-cutoff current vs ambient temperat ure 25 50 75 100 125 150 0.1 1 10 10 0 t - ambient temperature ( c) i - collector current (na) a v = 20 v cb cbo bas e-emitt er on voltage vs collector current 1 10 100 1000 0.2 0.4 0.6 0.8 1 i - collector current (ma) v - base-e mitter on voltage (v) be(o n) 125 c - 4 0 c 25 c c v = 5v ce base-emitt er sat uration voltage vs collector current 0.01 0.1 1 0.2 0.4 0.6 0.8 1 1.2 1.4 i - colle ctor current ( a) v - base-emitter voltag e (v) besat c = 10 125 c - 40 c 25 c
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